Design of SRAM Cell at Low Supply Voltage Based on Schmitt Trigger
نویسنده
چکیده
Embedded SRAM is involved in many low-energy applications, e.g. stand-alone wireless sensor nodes. SRAMs have the highest energy contribution in such applications. Unlike dynamic RAM, it does not need to refresh. In modern Trends, the demand for memory has been increases tremendously. We analyze Schmitt-Trigger (ST)-based static random access memory (SRAM) bitcells for ultralow-voltage operation. The ST-based SRAM bitcells address the fundamental conflicting design requirement of the read versus write operation of a conventional 6T bitcell. The ST operation provides better read-stability as well as better writeability compared to the standard 6T bitcell. This technology reduces power as well leakage current and improves signal noise margin (SNM). Keywords— ―SRAM, Schmitt-Trigger (ST), Stability, SNM, System-on-Chip(SoC), Low power‖
منابع مشابه
Analysis of Design of Schmitt Trigger Based SRAM Cell Using a Novel Power Reduction Technique
In low power SRAM memory cell design Power dissipation through standby leakage and dynamic loss is a major problem. this paper is mainly based on low power cell operation and delay of SRAM designing this paper presents a novel technique to reduce short circuit power. The differential SRAM for ultra low voltage design for Schmitt trigger (ST) is analyzed using 180nm CMOS technology. Schmitt trig...
متن کاملRead/Write Stability Improvement of 8T Sram Cell Using Schmitt Trigger
In recent years the demand for low power devices has increased tremendously due to the migration of computer workstations to handheld devices that need real-time performance within the budget for physical size and energy dissipation. As a result of this there is a fast growth of battery operated portable applications such as PDAs, cell phones, laptops and other handheld devices. But also at the...
متن کاملReduced-Complexity Nonbinary LDPC Decoder for High-Order Galois Fields Based on Trellis Min-Max Algorithm
Memories Precharge-Free, Low-Power Content-Addressable Memory .. . . . . . . . . . . . . . . . . . . . . . . . . . . . M. Zackriya V and H. M. Kittur 2614 A Low-Voltage Radiation-Hardened 13T SRAM Bitcell for Ultralow Power Space Applications .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
متن کاملUltra-Low Power, Process-Tolerant 10T (PT10T) SRAM with Improved Read/Write Ability for Internet of Things (IoT) Applications
Abstract: An ultra-low power (ULP), power gated static random access memory (SRAM) is presented for Internet of Things (IoT) applications, which operates in sub-threshold voltage ranges from 300mV to 500mV. The proposed SRAM has tendency to operate in low supply voltages with high static and dynamic noise margins. The IoT application involves battery enabled low leakage memory architecture in s...
متن کاملLow Leakage Asynchronous PP based Single Ended 8T SRAM bit-cell at 45nm CMOS Technology
Low power SRAM memory designs has become challenging for portable device applications. Semiconductor/ VLSI industry growth has exponentially demanding low leakage power SRAM designs for high performance chips and microprocessors. To get optimized standard cell memory design for battery operated devices at deep sub micron CMOS technology, a low leakage Asynchronous 8T SRAM is proposed. In this p...
متن کامل